View MRF1507_41810.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF1507/D
The RF MOSFET Line
RF Power Field Effect Transistor
The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portable FM equipment. * Specified Performance @ 520 MHz, 7.5 Volts Output Power -- 8 Watts Power Gain -- 10 dB Efficiency -- 65% * Characterized with Series Equivalent Large-Signal D Impedance Parameters * Excellent Thermal Stability * Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 dB Overdrive * Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request G * RF Power Plastic Surface Mount Package * Available in Tape and Reel by Adding T1 Suffix to Part Number. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
S
N-Channel Enhancement-Mode Lateral MOSFETs
MRF1507 MRF1507T1
8 W, 520 MHz, 7.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
CASE 466-02, STYLE 1 (PLD 1.5)
MAXIMUM RATINGS
Rating Drain-Source Voltage (1) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg Tj Value 25 20 4 62.5 0.50 - 65 to +150 150 Unit Vdc Vdc Adc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case (1) Not designed for 12.5 volt applications. Symbol RJC Max 2 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 1
MOTOROLA RF (c) Motorola, Inc. 1998 DEVICE DATA
MRF1507 MRF1507T1 1
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0) Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Common-Source Amplifier Power Gain (VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz) Drain Efficiency (VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz) Pout (VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz) Gps Pout 10 50 8 11 65 9.9 -- -- -- dB % W Ciss Coss Crss -- -- -- 48 40.5 5.2 -- -- -- pF pF pF VGS(th) VDS(on) gfs 2.5 0.3 1.30 3.4 0.44 1.80 -- -- -- Vdc Vdc S IDSS IGSS -- -- -- -- 1 1 Adc Adc Symbol Min Typ Max Unit
MRF1507 MRF1507T1 2
MOTOROLA RF DEVICE DATA
VGG C1
R2 + C2 R1 R3 C3 C6
B1 + VDD C4 C5
L1 N2 RF OUTPUT
Z7 N1 RF INPUT Z1 Z2 C8 C7 C9 Z3 Z4 R4 Z5 Z6 DUT
Z8
Z9
Z10 C14
Z11
C12 C10 C11
C13
B1 C1, C5 C2, C4 C3, C6, C8, C14 C7, C9, C13 C10 C11 C12 L1 N1, N2 R1 R2 R3
Fair Rite Products Long Ferrite Bead 0.1 F, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 130 pF, 100 mil Chip Capacitor 0.3-20 pF Trimmer Capacitor 82 pF, 100 mil Chip Capacitor 39 pF, 100 mil Chip Capacitor 32 pF, 100 mil Chip Capacitor 4 Turns, #20 AWG Enamel, 0.1 ID Type N Connectors 1.1 M, 1/4 W Carbon 2 k, 1/2 W Carbon 100 , 1/4 W Carbon
R4 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Board
20 , 1/4 W Carbon 0.459 x 0.083 Microstrip 0.135 x 0.083 Microstrip 1.104 x 0.083 Microstrip 0.114 x 0.083 Microstrip 0.154 x 0.083 Microstrip 0.259 x 0.213 Microstrip 0.217 x 0.213 Microstrip 0.175 x 0.083 Microstrip 0.747 x 0.083 Microstrip 0.608 x 0.083 Microstrip 0.594 x 0.083 Microstrip Glass Teflon, 31 mils
Figure 1. 500 - 520 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS
11 10 Pout , OUTPUT POWER (WATTS) 9 8 7 6 5 4 3 2 1 0.10 0.30 0.71 1.10 0.50 0.90 Pin, INPUT POWER (WATTS) VDD = 7.5 V IDQ = 200 mA 1.31 1.51 400 MHz 470 MHz 440 MHz Pout , OUTPUT POWER (WATTS) 12 11 10 9 8 7 6 5 4 6 7 8 VDD, SUPPLY VOLTAGE (V) 9 Pin = 300 mW 10 500 mW IDQ = 200 mA 700 mW
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage @ 400 MHz
MOTOROLA RF DEVICE DATA
MRF1507 MRF1507T1 3
TYPICAL CHARACTERISTICS
13 12 Pout , OUTPUT POWER (WATTS) 11 10 9 8 7 6 5 4 6 7 8 VDD, SUPPLY VOLTAGE (V) 9 10 Pin = 300 mW 500 mW Pout , OUTPUT POWER (WATTS) IDQ = 200 mA 700 mW 13 12 11 10 500 mW 9 8 7 6 5 4 6 7 8 VDD, SUPPLY VOLTAGE (V) 9 10 Pin = 300 mW IDQ = 200 mA 700 mW
Figure 4. Output Power versus Supply Voltage @ 470 MHz
Figure 5. Output Power versus Supply Voltage @ 440 MHz
9 Pout , OUTPUT POWER (WATTS) 8.5 8 f = 440 MHz 7.5 f = 400 MHz 7 6.5 6 VCC = 7.5 V Pin = 0.6 W f = 470 MHz
20
80
16 GAIN (dB), P (WATTS) out DRAIN EFFICIENCY
70 DRAIN EFFICIENCY (%) DRAIN EFFICIENCY (%)
12 GAIN 8 Pout 4 f = 520 MHz IDQ = 150 mA Pin = 0.7 W 9
60
50
40
0 0 50 100 150 200 250 300 350 IDQ, GATE CURRENT (mA) 400 450 500 4 5 7 8 VDD, DRAIN VOLTAGE (V) 6
30 10
Figure 6. Output Power versus Gate Current
Figure 7. Gain, Pout, Efficiency versus Drain Voltage
12 Gp (dB),Pout , OUTPUT POWER (WATTS) GAIN
15
70
GAIN GAIN (dB), P (WATTS) out 10 DRAIN EFFICIENCY
60
10
Pout
50
5 f = 520 MHz VDD = 7.5 V IDQ = 150 mA
Pout Pout
40
f = 520 MHz VDD = 7.5 V Pin = 0.7 W 8 0 0.1 0.2 0.3 0.4 0.5 IDQ (A) 0.6 0.7 0.8 0.9 1.0 0 15
30
17
19
21
23
25
27
20 29
INPUT POWER (dBm)
Figure 8. Pout versus IDQ
Figure 9. Pout, Gain, Drain Efficiency versus Pin
MRF1507 MRF1507T1 4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
12 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 10 8 6 4 2 0 Pin = 250 mW f = 500 MHz VDD = 7.5 V 700 mW 500 mW 12 10 8 6 4 2 0 0 f = 500 MHz VDD = 7.5 V 100 200 300 400 500 600 IDQ, (mA) 700 800 900 1000 Pin = 250 mW 700 mW 500 mW
4
5
7 8 VDS, DRAIN VOLTAGE (V) 6
9
10
Figure 10. Pout versus Drain Voltage
Figure 11. Pout versus IDQ
12 Pout , OUTPUT POWER (WATTS) 10 8 6 4 2 0 Pin = 250 mW 700 mW 500 mW Pout , OUTPUT POWER (WATTS) f = 520 MHz VDD = 7.5 V
12 10 8 6 4 2 0 4 5 7 8 VDS, DRAIN VOLTAGE (V) 6 9 10 0 100 200 300 400 500 600 IDQ, (mA) 700 800 900 1000 f = 520 MHz VDD = 7.5 V 700 mW 500 mW
Pin = 250 mW
Figure 12. Pout versus Drain Voltage
Figure 13. Pout versus IDQ
12 VDD = 9 V Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 11 10 9 8 7 6 5 20 21 22 Pin, (dBm) 23 f = 135 MHz IDQ = 800 mA 24 25 VDD = 7.5 V
17 15 13 VDD = 7.5 V 11 9 7 5 f = 155 MHz IDQ = 800 mA 20 21 22 Pin, (dBm) 23 24 25 VDD = 9 V
Figure 14. Pout versus Pin
Figure 15. Pout versus Pin
MOTOROLA RF DEVICE DATA
MRF1507 MRF1507T1 5
TYPICAL CHARACTERISTICS
17 Pout , OUTPUT POWER (WATTS) 15 13 11 9 7 5 f = 175 MHz IDQ = 800 mA 20 21 22 Pin, (dBm) 23 24 25 VDD = 7.5 V 4 VDS = 10 V ID , DRAIN CURRENT (AMPS) 3
VDD = 9 V
2
TYPICAL DEVICE SHOWN
1
0
0
1
3 2 4 VGS, GATE-SOURCE VOLTAGE (V)
5
6
Figure 16. Pout versus Pin
Figure 17. Drain Current versus Gate Voltage (Typical Device Shown)
80 ID , DRAIN CURRENT (AMPS) VGS = 0 V f = 1 MHz C, CAPACITANCE (pF) 60 Ciss 40 Coss 20
5
4
3
TC = 25C
2
1
0
Crss 0 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) 5 20
0
0
10 VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 18. Capacitance versus Voltage
Figure 19. Maximum Rated Forward Biased Safe Operating Area
MRF1507 MRF1507T1 6
MOTOROLA RF DEVICE DATA
520 ZOL*
f = 400 MHz 175 ZOL* f = 400 MHz Zo = 10
f = 135 MHz
520
Zin f = 135 MHz
Zin 175
VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W f MHz 400 440 470 500 520 Zin 3.6 - j3.1 4.0 - j3.7 3.1 - j4.4 2.0 - j2.71 1.9 - j3.5 ZOL* 2.5 - j0.5 2.7 - j0.6 2.5 - j1.2 2.05 - j0.65 2.1 - j0.4 f MHz 135 155 175
VDD = 7.5 V, IDQ = 800 mA, Pout = 8 W Zin 6.2 - j15.1 8.29 - j16.9 5.33 - j17.0 ZOL* 2.3 - j1.8 2.5 - j0.8 2.6 - j0.6
Zin
= Conjugate of source impedance with parallel 20 resistor and 82 pF capacitor in series with gate.
Zin
= Conjugate of source impedance with parallel 10 resistor and 1000 pF capacitor in series with gate.
ZOL* = Conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %.
ZOL* = Conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
MOTOROLA RF DEVICE DATA
MRF1507 MRF1507T1 7
Table 1. Common Source Scattering Parameters (VDS = 7.5 Vdc) ID = 150 mA
f MHz 50 100 200 300 400 500 700 850 1000 1200 S11 |S11| 0.76 0.77 0.81 0.85 0.89 0.91 0.95 0.96 0.97 0.98 -138 -155 -162 -165 -167 -169 -171 -173 -174 -175 |S21| 15.18 7.68 3.53 2.08 1.37 0.96 0.54 0.38 0.29 0.20 S21 100 84 65 53 44 37 27 22 19 16 |S12| 0.04 0.04 0.03 0.03 0.03 0.02 0.01 0.01 0.01 0.01 S12 12 -3 -18 -27 -33 -36 -35 -30 -19 3 |S22| 0.71 0.72 0.78 0.83 0.87 0.90 0.94 0.95 0.96 0.97 S22 -141 -156 -162 -164 -166 -168 -170 -172 -173 -174
ID = 800 mA
f MHz 50 100 200 300 400 500 700 850 1000 1200 S11 |S11| 0.82 0.81 0.82 0.84 0.85 0.87 0.90 0.91 0.92 0.94 -152 -165 -170 -172 -172 -172 -173 -174 -175 -176 |S21| 16.58 8.37 4.08 2.60 1.84 1.38 0.86 0.64 0.49 0.36 S21 98 88 76 68 61 54 44 38 33 29 |S12| 0.03 0.03 0.02 0.02 0.02 0.02 0.02 0.01 0.01 0.01 S12 9 1 -8 -13 -17 -20 -21 -19 -12 2 |S22| 0.79 0.80 0.81 0.83 0.84 0.86 0.89 0.90 0.92 0.93 S22 -161 -169 -172 -173 -173 -173 -174 -174 -175 -176
ID = 1.5 A
f MHz 50 100 200 300 400 500 700 850 1000 1200 S11 |S11| 0.83 0.83 0.83 0.84 0.86 0.87 0.89 0.91 0.92 0.93 -156 -167 -172 -173 -173 -174 -174 -175 -175 -176 |S21| 16.45 8.29 4.06 2.61 1.86 1.41 0.89 0.67 0.52 0.38 S21 97 88 77 70 63 57 47 41 36 31 |S12| 0.02 0.02 0.02 0.02 0.02 0.02 0.01 0.01 0.01 0.01 S12 9 1 -6 -10 -13 -15 -16 -13 -6 8 |S22| 0.80 0.81 0.82 0.83 0.85 0.86 0.88 0.90 0.91 0.92 S22 -164 -171 -174 -174 -174 -174 -175 -175 -175 -176
MRF1507 MRF1507T1 8
MOTOROLA RF DEVICE DATA
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS The MRF1507 is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on.
MOTOROLA RF DEVICE DATA
MRF1507 MRF1507T1 9
DC BIAS Since the MRF1507 is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. The MRF1507 was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF1507 may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MOUNTING The specified maximum thermal resistance of 2C/W assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal
of the thermal design should be to minimize the temperature at the back side of the package. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for the MRF1507. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large- signal impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of the MRF1507 yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Tw o-port stabi l i ty anal y s is w i th the M RF1507 S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability.
MRF1507 MRF1507T1 10
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
L R
2
C P
10_DRAFT ZONE X
U S
ZONE V
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25
AF
3
4
NK
G
1
D B Q
E
0.89 (0.035) X 45 _
"5 _
MOTOROLA RF DEVICE DATA
EEE EEE EEEE EEEE EEEE EEEE EEEE EEEE
H J
STYLE 1: PIN 1. 2. 3. 4.
ZONE
RESIN BLEED/FLASH ALLOWABLE
DRAIN GATE SOURCE SOURCE
DIM A B C D E W F G H J K L N P Q R S U ZONE V ZONE W ZONE X
CASE 466-02 ISSUE B (PLD 1.5)
MRF1507 MRF1507T1 11
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
MRF1507 MRF1507T1 12
MOTOROLA RF DEVICEMRF1507/D DATA

▲Up To Search▲

Price & Availability of MRF1507

	To Download MRF1507 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .